LONG-RANGE [111] ORDERING IN GAAS1-XPX

被引：36

作者：

JEN, HR

CAO, DS

STRINGFELLOW, GB

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 19期

关键词：

D O I：

10.1063/1.101232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1890 / 1892

页数：3

共 20 条

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ANDRE, JP .

APPLIED PHYSICS LETTERS, 1988, 52 (07) :567-569

[2] ORDERING OF ISOVALENT INTERSEMICONDUCTOR ALLOYS [J].

BERNARD, JE ;

FERREIRA, LG ;

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ZUNGER, A .

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[3]

CAO DS, 1988, 15TH INT S GALL ARS

[4] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].

GOMYO, A ;

SUZUKI, T ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

YUASA, T .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675

[5] OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS [J].

GOMYO, A ;

SUZUKI, T ;

IIJIMA, S .

PHYSICAL REVIEW LETTERS, 1988, 60 (25) :2645-2648

[6]

GORAL JP, 1977, EPITAXY SEMICONDUCTO, P583

[7] ORDERING IN GAAS1-XSBX GROWN BY MOLECULAR-BEAM EPITAXY [J].

IHM, YE ;

OTSUKA, N ;

KLEM, J ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2013-2015

[8]

Jen H. H., UNPUB

[9] THE KINETIC ASPECTS OF ORDERING IN GAAS1-XSBX GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

JEN, HR ;

JOU, MJ ;

CHERNG, YT ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :175-181

[10] LONG-RANGE ORDER IN INASSB [J].

JEN, HR ;

MA, KY ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1989, 54 (12) :1154-1156

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