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THE KINETIC ASPECTS OF ORDERING IN GAAS1-XSBX GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
被引:71
作者
:
JEN, HR
论文数:
0
引用数:
0
h-index:
0
JEN, HR
JOU, MJ
论文数:
0
引用数:
0
h-index:
0
JOU, MJ
CHERNG, YT
论文数:
0
引用数:
0
h-index:
0
CHERNG, YT
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1987年
/ 85卷
/ 1-2期
关键词
:
D O I
:
10.1016/0022-0248(87)90219-3
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:175 / 181
页数:7
相关论文
共 30 条
[1]
GROWTH OF GAAS(1-X)SBX BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
BEDAIR, SM
论文数:
0
引用数:
0
h-index:
0
机构:
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
BEDAIR, SM
TIMMONS, ML
论文数:
0
引用数:
0
h-index:
0
机构:
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
TIMMONS, ML
CHIANG, PK
论文数:
0
引用数:
0
h-index:
0
机构:
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
CHIANG, PK
SIMPSON, L
论文数:
0
引用数:
0
h-index:
0
机构:
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
SIMPSON, L
HAUSER, JR
论文数:
0
引用数:
0
h-index:
0
机构:
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
HAUSER, JR
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1983,
12
(06)
: 959
-
972
[2]
MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY
CHANG, CA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
CHANG, CA
LUDEKE, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LUDEKE, R
CHANG, LL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
CHANG, LL
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ESAKI, L
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(11)
: 759
-
761
[3]
GAAS1-XSBX GROWTH BY OMVPE
CHERNG, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
CHERNG, MJ
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
COHEN, RM
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1984,
13
(05)
: 799
-
813
[4]
ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5
CHERNG, MJ
论文数:
0
引用数:
0
h-index:
0
CHERNG, MJ
STRINGFELLOW, GG
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GG
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
COHEN, RM
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(07)
: 677
-
679
[5]
OMVPE GROWTH OF THE METASTABLE-III/V ALLOY GAAS0.5SB0.5
CHERNG, MJ
论文数:
0
引用数:
0
h-index:
0
CHERNG, MJ
CHERNG, YT
论文数:
0
引用数:
0
h-index:
0
CHERNG, YT
JEN, HR
论文数:
0
引用数:
0
h-index:
0
JEN, HR
HARPER, P
论文数:
0
引用数:
0
h-index:
0
HARPER, P
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
COHEN, RM
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1986,
15
(02)
: 79
-
85
[6]
CHERNG MJ, 1984, APPL PHYS LETT, V44, P550
[7]
BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CASEY, HC
FOY, PW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
FOY, PW
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(08)
: 397
-
399
[8]
THE ORGANO-METALLIC VPE GROWTH OF GASB AND GAAS1-XSBX USING TRIMETHYLANTIMONY
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
COOPER, CB
SAXENA, RR
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
SAXENA, RR
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
LUDOWISE, MJ
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1982,
11
(06)
: 1001
-
1010
[9]
EDINGTON JW, 1976, PRACTICAL ELECTRON M, P97
[10]
GALLIUM-ARSENIDE ANTIMONIDE - POSSIBILITY OF LATTICE-MATCHED LPE GROWTH ON INP SUBSTRATES
FONSTAD, CG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
FONSTAD, CG
QUILLEC, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
QUILLEC, M
GARONE, S
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
GARONE, S
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(12)
: 5920
-
5923
←
1
2
3
→
共 30 条
[1]
GROWTH OF GAAS(1-X)SBX BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
BEDAIR, SM
论文数:
0
引用数:
0
h-index:
0
机构:
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
BEDAIR, SM
TIMMONS, ML
论文数:
0
引用数:
0
h-index:
0
机构:
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
TIMMONS, ML
CHIANG, PK
论文数:
0
引用数:
0
h-index:
0
机构:
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
CHIANG, PK
SIMPSON, L
论文数:
0
引用数:
0
h-index:
0
机构:
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
SIMPSON, L
HAUSER, JR
论文数:
0
引用数:
0
h-index:
0
机构:
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
RES TRIANGLE INST, RES TRIANGLE PK, NC 27709 USA
HAUSER, JR
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1983,
12
(06)
: 959
-
972
[2]
MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY
CHANG, CA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
CHANG, CA
LUDEKE, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LUDEKE, R
CHANG, LL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
CHANG, LL
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ESAKI, L
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(11)
: 759
-
761
[3]
GAAS1-XSBX GROWTH BY OMVPE
CHERNG, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
CHERNG, MJ
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
COHEN, RM
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
STRINGFELLOW, GB
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1984,
13
(05)
: 799
-
813
[4]
ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5
CHERNG, MJ
论文数:
0
引用数:
0
h-index:
0
CHERNG, MJ
STRINGFELLOW, GG
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GG
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
COHEN, RM
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(07)
: 677
-
679
[5]
OMVPE GROWTH OF THE METASTABLE-III/V ALLOY GAAS0.5SB0.5
CHERNG, MJ
论文数:
0
引用数:
0
h-index:
0
CHERNG, MJ
CHERNG, YT
论文数:
0
引用数:
0
h-index:
0
CHERNG, YT
JEN, HR
论文数:
0
引用数:
0
h-index:
0
JEN, HR
HARPER, P
论文数:
0
引用数:
0
h-index:
0
HARPER, P
COHEN, RM
论文数:
0
引用数:
0
h-index:
0
COHEN, RM
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1986,
15
(02)
: 79
-
85
[6]
CHERNG MJ, 1984, APPL PHYS LETT, V44, P550
[7]
BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CASEY, HC
FOY, PW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
FOY, PW
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(08)
: 397
-
399
[8]
THE ORGANO-METALLIC VPE GROWTH OF GASB AND GAAS1-XSBX USING TRIMETHYLANTIMONY
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
COOPER, CB
SAXENA, RR
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
SAXENA, RR
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
LUDOWISE, MJ
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1982,
11
(06)
: 1001
-
1010
[9]
EDINGTON JW, 1976, PRACTICAL ELECTRON M, P97
[10]
GALLIUM-ARSENIDE ANTIMONIDE - POSSIBILITY OF LATTICE-MATCHED LPE GROWTH ON INP SUBSTRATES
FONSTAD, CG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
FONSTAD, CG
QUILLEC, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
QUILLEC, M
GARONE, S
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
GARONE, S
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(12)
: 5920
-
5923
←
1
2
3
→