EXCITATION WAVELENGTH AND INTENSITY DEPENDENCE OF LUMINESCENCE DECAY IN A-SI(H)

被引：20

作者：

SHAH, J ^{[1
]}

BAGLEY, BG ^{[1
]}

ALEXANDER, FB ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 36卷 / 03期

关键词：

D O I：

10.1016/0038-1098(80)90260-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：199 / 203

页数：5

共 18 条

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[9] TIME RESOLVED PHOTO-LUMINESCENCE NEAR THE BAND-GAP IN AMORPHOUS SILICON [J].

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SOLID STATE COMMUNICATIONS, 1979, 32 (10) :879-883

[10] FATIGUE EFFECT IN LUMINESCENCE OF GLOW-DISCHARGE AMORPHOUS-SILICON AT LOW-TEMPERATURES [J].

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