MESA STRIPE TRANSVERSE INJECTION-LASER IN HGCDTE

In this letter, we report the fabrication and operation of narrow stripe, transverse injection, HgCdTe lasers. The double heterostructure of the laser was grown by molecular beam epitaxy on (111) CdZnTe substrate. The n-type base was extrinsically indium doped but the upper p-type confining layer was only doped by deviation from stoichiometry. Laser emissions at 3.40 and 3.56 mum were obtained at 78 K under pulsed current conditions. Threshold current as low as 48 mA and differential quantum efficiency as high as 4.2% were achieved. Over 60 K threshold current has an exponential increase with temperature and a T0 parameter of 8 K.