THEORY OF THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF AN INGAASP LASER

被引：19

作者：

HAUG, A

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 06期

关键词：

D O I：

10.1109/JQE.1985.1072700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：716 / 718

页数：3

相关论文

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[6] EVIDENCE OF THE IMPORTANCE OF AUGER RECOMBINATION FOR INGAASP LASERS
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[7] AUGER RECOMBINATION IN INGAASP
HAUG, A
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 512 - 514
[8] THE EFFECT OF INTERVALENCE BAND ABSORPTION ON THE THERMAL-BEHAVIOR OF INGAASP LASERS
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[10] Horikoshi Y., 1982, GaInAsP alloy semiconductors, P379