EFFECT OF AUGER RECOMBINATION ON THE THRESHOLD CHARACTERISTICS OF GAIN-GUIDED INGAASP LASERS

被引：11

作者：

AGRAWAL, GP

DUTTA, NK

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 23期

关键词：

D O I：

10.1049/el:19830662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：974 / 976

页数：3

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[1] BEAM-PROPAGATION ANALYSIS OF STRIPE-GEOMETRY SEMICONDUCTOR-LASERS - THRESHOLD BEHAVIOR
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[6] CHARACTERISTICS OF DIFFUSED-STRIPE INP-INGAASP-INP LASERS EMITTING AROUND 1.55 MU-M
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[7] GAINASP-INP PLANAR STRIPE LASERS PREPARED BY USING SPUTTERED SIO2 FILM AS A ZN-DIFFUSION MASK
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[8] PHOTO-EXCITED CARRIER LIFETIME AND AUGER RECOMBINATION IN 1.3-MU-M INGAASP
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[9] BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 627 - 635