PHOTO-EXCITED CARRIER LIFETIME AND AUGER RECOMBINATION IN 1.3-MU-M INGAASP

被引:76
作者
SERMAGE, B
EICHLER, HJ
HERITAGE, JP
NELSON, RJ
DUTTA, NK
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] BELL TEL LABS INC,HOLMDEL,NJ 07733
关键词
D O I
10.1063/1.93907
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:259 / 261
页数:3
相关论文
共 17 条
[1]   THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].
ADAMS, AR ;
ASADA, M ;
SUEMATSU, Y ;
ARAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624
[2]   SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES [J].
ASBECK, P .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :820-822
[3]   PICOSECOND OPTICAL MEASUREMENTS OF BAND-TO-BAND AUGER RECOMBINATION OF HIGH-DENSITY PLASMAS IN GERMANIUM [J].
AUSTON, DH ;
SHANK, CV ;
LEFUR, P .
PHYSICAL REVIEW LETTERS, 1975, 35 (15) :1022-1025
[4]  
CASEY HC, 1978, HETEROSTRUCTURE LASE, P129
[5]   GAIN-CURRENT RELATION FOR INO.72GAO.28ASO.6PO.4 LASERS [J].
DUTTA, NK .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :55-60
[6]   TEMPERATURE-DEPENDENCE OF THE LASING CHARACTERISTICS OF THE 1.3-MU-M INGAASP-INP AND GAAS-AL0.36GA0.64AS DH LASERS [J].
DUTTA, NK ;
NELSON, RJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (05) :871-878
[7]   CALCULATED ABSORPTION, EMISSION, AND GAIN IN IN0.72GA0.28AS0.6P0.4 [J].
DUTTA, NK .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6095-6100
[8]  
DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[9]   THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J].
DUTTA, NK ;
NELSON, RJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :74-92
[10]   TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERS [J].
ETTENBERG, M ;
NUESE, CJ ;
KRESSEL, H .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2949-2950