OBSERVATION OF A NOVEL FORM OF ORDERING IN AL0.5IN0.5AS AND (GA,AL)0.5IN0.5AS

被引：5

作者：

BAXTER, CS ^{[1
]}

STOBBS, WM ^{[1
]}

BROOM, RF ^{[1
]}

REITHMAIER, JP ^{[1
]}

机构：

[1] IBM CORP,DIV RES,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 131卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(93)90190-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have found a novel form of ordering in Al0.5In0.5As and (Ga,Al)0.5In0.5As as grown on (001) substrates by molecular beam epitaxy (MBE). Electron diffraction patterns reveal a four-fold periodicity along the [110BAR] direction as well as the more usual two-fold periodicity along [111BAR] directions. The morphology of the latter type of ordering is also different from its normal form.

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页码：419 / 425

页数：7

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