FUNDAMENTAL DIFFERENCES BETWEEN THICK AND THIN OXIDES SUBJECTED TO HIGH ELECTRIC-FIELDS

被引:25
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WARREN, WL
LENAHAN, PM
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10.1063/1.339110
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O59 [应用物理学];
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页码:4305 / 4308
页数:4
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共 17 条
[1]   DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE [J].
BRORSON, SD ;
DIMARIA, DJ ;
FISCHETTI, MV ;
PESAVENTO, FL ;
SOLOMON, PM ;
DONG, DW .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1302-1313
[2]   ELECTRON HEATING IN SILICON DIOXIDE AND OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS [J].
DIMARIA, DJ ;
THEIS, TN ;
KIRTLEY, JR ;
PESAVENTO, FL ;
DONG, DW ;
BRORSON, SD .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1214-1238
[3]   OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J].
FEIGL, FJ ;
FOWLER, WB ;
YIP, KL .
SOLID STATE COMMUNICATIONS, 1974, 14 (03) :225-229
[4]  
FISCHETTI MV, 1985, J APPL PHYS, V57, P419
[5]  
Griscom D.L., 1978, PHYSICS SIO2 ITS INT, P232
[6]   HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J].
LENAHAN, PM ;
DRESSENDORFER, PV .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3495-3499
[7]   PARAMAGNETIC TRIVALENT SILICON CENTERS IN GAMMA-IRRADIATED METAL-OXIDE-SILICON STRUCTURES [J].
LENAHAN, PM ;
DRESSENDORFER, PV .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :96-98
[8]   ELECTRON-SPIN-RESONANCE STUDY OF INTERFACE STATES INDUCED BY ELECTRON INJECTION IN METAL-OXIDE-SEMICONDUCTOR DEVICES [J].
MIKAWA, RE ;
LENAHAN, PM .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2054-2059
[9]   STUDY OF SILICON-SILICON DIOXIDE STRUCTURE BY ELECTRON-SPIN RESONANCE .2. [J].
NISHI, Y ;
OHWADA, A ;
TANAKA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (01) :85-&
[10]   HIGH-FIELD CURRENT INDUCED-POSITIVE CHARGE TRANSIENTS IN SIO2 [J].
NISSANCOHEN, Y ;
SHAPPIR, J ;
FROHMANBENTCHKOWSKY, D .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5793-5800