INFLUENCE OF THE POTENTIAL SPIKE ON HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR

被引：13

作者：

LIU, WC

LOUR, WS

机构：

[1] Department of Electrical Engineering, National Cheng-Kung University, Tainan

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 02期

关键词：

D O I：

10.1063/1.347372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of potential spike on the transport properties of heterostructure-emitter bipolar transistor (HEBT) has been demonstrated. The potential spike is attributed primarily to the extended depletion region adjacent the p + GaAs base layer. Due to the existence of potential spike, the electrical properties including conducting current, current gain, and offset voltage, etc., are degraded seriously. The knee-shaped characteristics and strong reachthrough effect are observed. Consequently, the design of the structural parameters, such as GaAs emitter (collector) width adjacent p + base, plays an important role of high-performance HEBT devices.

引用

页码：1063 / 1066

页数：4

共 14 条

[1]

Asbeck P. M., 1981, International Electron Devices Meeting, P629

[2]

BAILBE JP, 1980, ELECTRON LETT, V16, P1160

[3] GAALAS-GAAS HETEROJUNCTION MICROWAVE BIPOLAR-TRANSISTOR [J].