THE ON-ORBIT MEASUREMENTS OF SINGLE EVENT PHENOMENA BY ETS-V SPACECRAFT

被引:16
作者
GOKA, T [1 ]
KUBOYAMA, S [1 ]
SHIMANO, Y [1 ]
KAWANISHI, T [1 ]
机构
[1] NATL SPACE DEV AGCY JAPAN,TSUKUBA,JAPAN
关键词
D O I
10.1109/23.124164
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The on-orbit data of single event phenomena were obtained for the CMOS static RAMs equipped in Engineering Test Satellite-V (ETS-V) in a geostationary orbit. The single event latchup and single event upset data were acquired for a period of about 3 years, and the effects of solar flares were observed. A comparison with the data (single event upset) of TTL SRAMs by Marine Observation Satellite-1 (MOS-1: a medium-altitude satellite) was also conducted. The Poisson distribution and the extreme-value theory (double exponential distribution) were adopted to analyze the data. From this analysis a decrease of the number of single events could be found during the solar maximum.
引用
收藏
页码:1693 / 1699
页数:7
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