SINGLE EVENT EFFECTS IN HIGH-DENSITY CMOS SRAMS

被引：14

作者：

SHIONO, N

SAKAGAWA, Y

SEKIGUCHI, M

SATO, K

SUGAI, I

HATTORI, T

HIRAO, Y

机构：

[1] UNIV TOKYO,INST NUCL STUDY,TOKYO 188,JAPAN

[2] TOKYO INST TECHNOL,TOKYO 152,JAPAN

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1632 / 1636

页数：5

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