THE EFFECT OF ELEVATED-TEMPERATURE ON LATCHUP AND BIT ERRORS IN CMOS DEVICES

被引:31
作者
KOLASINSKI, WA [1 ]
KOGA, R [1 ]
SCHNAUSS, E [1 ]
DUFFEY, J [1 ]
机构
[1] HUGHES AIRCRAFT CO,ELECTRO OPT DATA SYST GRP,MANHATTAN BEACH,CA 90266
关键词
D O I
10.1109/TNS.1986.4334649
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1605 / 1609
页数:5
相关论文
共 8 条
[1]   HIGH-TEMPERATURE SCHOTTKY TTL LATCHUP [J].
COOPER, MS ;
RETZLER, JP ;
MESSENGER, GC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1538-1544
[2]   ERROR ANALYSIS AND PREVENTION OF COSMIC ION-INDUCED SOFT ERRORS IN STATIC CMOS RAMS [J].
DIEHL, SE ;
OCHOA, A ;
DRESSENDORFER, PV ;
KOGA, R ;
KOLASINSKI, WA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2032-2039
[3]   INVESTIGATION OF SOFT UPSETS IN INTEGRATED-CIRCUIT MEMORIES AND CHARGE COLLECTION IN SEMICONDUCTOR TEST STRUCTURES BY THE USE OF AN ION MICROBEAM [J].
KNUDSON, AR ;
CAMPBELL, AB .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :625-631
[4]   HEAVY ION-INDUCED SINGLE EVENT UPSETS OF MICROCIRCUITS - A SUMMARY OF THE AEROSPACE CORPORATION TEST DATA [J].
KOGA, R ;
KOLASINSKI, WA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1190-1195
[5]   SIMULATION OF COSMIC-RAY INDUCED SOFT ERRORS AND LATCHUP IN INTEGRATED-CIRCUIT COMPUTER MEMORIES [J].
KOLASINSKI, WA ;
BLAKE, JB ;
ANTHONY, JK ;
PRICE, WE ;
SMITH, EC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :5087-5091
[6]   SINGLE EVENT UPSET (SEU) OF SEMICONDUCTOR-DEVICES - A SUMMARY OF JPL TEST DATA [J].
NICHOLS, DK ;
PRICE, WE ;
MALONE, CJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4520-4525
[7]  
SHOGA M, 1986, 4TH ANN DNA DOE NASA
[8]  
STAPOR WJ, 1986, IEEE T NUCL SCI, V33