GROWTH OF ULTRATHIN SINGLE-CRYSTAL NISI2 LAYERS ON SI(111)

[1] BEAN JC, UNPUB

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[3] STRUCTURE AND NUCLEATION MECHANISM OF NICKEL SILICIDE ON SI(111) DERIVED FROM SURFACE EXTENDED-X-RAY-ABSORPTION FINE-STRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (26) : 2402 - 2405

[4] DHEURLE FM, 1984, MATERIALS RES SOC S, V25, P3

[5] FRANCIOSI A, 1982, J VAC SCI TECHNOL, V21, P627

[6] Gibson J. M., 1983, MATER RES SOC S P, V14, P395

[7] HELLMAN F, IN PRESS

[8] HUNT BD, 1986, MATER RES SOC S P, V54, P479

[9] FORMATION OF EMBEDDED MONOCRYSTALLINE NISI2 GRID LAYERS IN SILICON BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (07): : L499 - L501

[10] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671

[1] BEAN JC, UNPUB

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[3] STRUCTURE AND NUCLEATION MECHANISM OF NICKEL SILICIDE ON SI(111) DERIVED FROM SURFACE EXTENDED-X-RAY-ABSORPTION FINE-STRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (26) : 2402 - 2405

[4] DHEURLE FM, 1984, MATERIALS RES SOC S, V25, P3

[5] FRANCIOSI A, 1982, J VAC SCI TECHNOL, V21, P627

[6] Gibson J. M., 1983, MATER RES SOC S P, V14, P395

[7] HELLMAN F, IN PRESS

[8] HUNT BD, 1986, MATER RES SOC S P, V54, P479

[9] FORMATION OF EMBEDDED MONOCRYSTALLINE NISI2 GRID LAYERS IN SILICON BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (07): : L499 - L501

[10] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671