FORMATION OF EMBEDDED MONOCRYSTALLINE NISI2 GRID LAYERS IN SILICON BY MBE

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] PATTERNED SILICON MOLECULAR-BEAM EPITAXY WITH SUB-MICRON LATERAL RESOLUTION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 752 - 755

[3] BOZLER C, 1979, DEC IEEE INT EL DEV, P384

[4] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[5] ISHIZAKA A, 1983, 15TH P C SOL STAT DE, P15

[6] ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183

[7] DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 203 - 205

[8] SHIRAKI Y, 1983, 15 C SOL STAT DEV MA, P7

[9] EPITAXIAL SILICIDES [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 77 - 90

[10] STRUCTURAL CHARACTERIZATION BY TRANSMISSION ELECTRON-MICROSCOPY OF SILICON GROWN OVER SUBMICROMETER-PERIOD GRATINGS OF DEPOSITED TUNGSTEN [J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 223 - 225

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] PATTERNED SILICON MOLECULAR-BEAM EPITAXY WITH SUB-MICRON LATERAL RESOLUTION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 752 - 755

[3] BOZLER C, 1979, DEC IEEE INT EL DEV, P384

[4] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[5] ISHIZAKA A, 1983, 15TH P C SOL STAT DE, P15

[6] ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183

[7] DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 203 - 205

[8] SHIRAKI Y, 1983, 15 C SOL STAT DEV MA, P7

[9] EPITAXIAL SILICIDES [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 77 - 90

[10] STRUCTURAL CHARACTERIZATION BY TRANSMISSION ELECTRON-MICROSCOPY OF SILICON GROWN OVER SUBMICROMETER-PERIOD GRATINGS OF DEPOSITED TUNGSTEN [J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 223 - 225