THE MECHANISM OF SELF-LIMITING GROWTH OF ATOMIC LAYER EPITAXY OF GAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLGALLIUM AND ARSINE

被引：32

作者：

WATANABE, A

ISU, T

HATA, M

KAMIJOH, T

KATAYAMA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 07期

关键词：

D O I：

10.1143/JJAP.28.L1080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1080 / L1082

页数：3

共 7 条

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