1ST 70 SEMICONDUCTOR AUGER PROCESSES

[1] ABAKUMOV VN, 1977, SOV PHYS SEMICOND+, V11, P766

[2] OVERLAP INTEGRALS FOR BLOCH ELECTRONS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527): : 337 - &

[3] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[4] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &

[5] RADIATIONLESS RECOMBINATION IN PHOSPHORS [J]. PHYSICAL REVIEW, 1958, 111 (01): : 129 - 132

[6] RELAXATION OF AUGER-EXCITED CARRIERS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1974, 15 (11-1) : 1837 - 1840

[7] 2-ELECTRON BAND TO BAND TRANSITIONS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (07) : 823 - 825

[8] IMPACT IONIZATION THEORY FOR TRAPS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 64 (01): : 39 - 48

[9] EFFECT OF COMPENSATION ON BREAKDOWN FIELDS IN HOMOGENEOUS SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 154 (03): : 683 - +

[10] MINORITY CARRIER LIFETIME IN HIGHLY DOPED GE [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (03) : 321 - +

[1] ABAKUMOV VN, 1977, SOV PHYS SEMICOND+, V11, P766

[2] OVERLAP INTEGRALS FOR BLOCH ELECTRONS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527): : 337 - &

[3] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[4] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &

[5] RADIATIONLESS RECOMBINATION IN PHOSPHORS [J]. PHYSICAL REVIEW, 1958, 111 (01): : 129 - 132

[6] RELAXATION OF AUGER-EXCITED CARRIERS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1974, 15 (11-1) : 1837 - 1840

[7] 2-ELECTRON BAND TO BAND TRANSITIONS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (07) : 823 - 825

[8] IMPACT IONIZATION THEORY FOR TRAPS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 64 (01): : 39 - 48

[9] EFFECT OF COMPENSATION ON BREAKDOWN FIELDS IN HOMOGENEOUS SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 154 (03): : 683 - +

[10] MINORITY CARRIER LIFETIME IN HIGHLY DOPED GE [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (03) : 321 - +