IMPACT IONIZATION THEORY FOR TRAPS IN SEMICONDUCTORS

被引：8

作者：

COHEN, ME

LANDSBERG, PT

机构：

[1] CALIF STATE UNIV, DEPT MATH, FRESNO, CA USA

[2] UNIV SOUTHAMPTON, DEPT MATH, SOUTHAMPTON, ENGLAND

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1974年 / 64卷 / 01期

关键词：

D O I：

10.1002/pssb.2220640105

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：39 / 48

页数：10

相关论文

共 10 条

[1] A NEW CLASS OF POLYNOMIALS RELEVANT TO ELECTRON COLLISION PROBLEMS
COHEN, ME
[J]. MATHEMATISCHE ZEITSCHRIFT, 1969, 108 (02) : 121 - &
[2] MULTIPLE INTEGRALS RELATED TO ELECTRON COLLISION PROBLEMS
COHEN, ME
[J]. MATHEMATISCHE ZEITSCHRIFT, 1969, 108 (03) : 191 - &
[3] EFFECT OF COMPENSATION ON BREAKDOWN FIELDS IN HOMOGENEOUS SEMICONDUCTORS
COHEN, ME
LANDSBERG, PT
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 683 - +
[4] Erdelyi A., 1953, BATEMAN MANUSCRIPT P, V2
[5] Gradshteyn I. S., 1980, TABLES OF INTEGRALS
[6] DETAILED BALANCE BETWEEN AUGER RECOMBINATION AND IMPACT IONIZATION IN SEMICONDUCTORS
LANDSBER.PT
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1972, 331 (1584): : 103 - &
[7] AUGER RECOMBINATION + IMPACT IONIZATION INVOLVING TRAPS IN SEMICONDUCTORS
LANDSBERG, PT
LAL, P
RHYSROBERTS, C
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 84 (5426): : 915 - &
[8] FIELD-DEPENDENCE OF CAPTURE AND RE-EMISSION OF CHARGE-CARRIERS BY SHALLOW LEVELS IN GERMANIUM AND SILICON
MARTINI, M
MCMATH, TA
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (02) : 129 - &
[9] ON PHYSICS OF AVALANCHE BREAKDOWN IN SEMICONDUCTORS
MONCH, W
[J]. PHYSICA STATUS SOLIDI, 1969, 36 (01): : 9 - +
[10] MAGNETIC FREEZEOUT AND IMPACT IONIZATION IN GAAS
POEHLER, TO
[J]. PHYSICAL REVIEW B, 1971, 4 (04): : 1223 - &