DETAILED BALANCE BETWEEN AUGER RECOMBINATION AND IMPACT IONIZATION IN SEMICONDUCTORS

被引:23
作者
LANDSBER.PT
机构
来源
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES | 1972年 / 331卷 / 1584期
关键词
D O I
10.1098/rspa.1972.0166
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
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页码:103 / &
相关论文
共 9 条
[1]   TRANSITION PROBABILITY OF IMPACT IONIZATION IN SILICON [J].
AHMAD, S ;
KHOKLEY, WS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (12) :2499-&
[2]   IMPACT IONIZATION AND QUANTUM EFFICIENCY IN SEMICONDUCTORS [J].
ANTONCIK, E .
CZECHOSLOVAK JOURNAL OF PHYSICS, 1967, 17 (11) :953-&
[3]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P198
[4]   EFFECT OF COMPENSATION ON BREAKDOWN FIELDS IN HOMOGENEOUS SEMICONDUCTORS [J].
COHEN, ME ;
LANDSBERG, PT .
PHYSICAL REVIEW, 1967, 154 (03) :683-+
[5]   IMPACT IONIZATION AND AUGER RECOMBINATION IN BANDS [J].
LANDSBERG, PT .
SOLID STATE COMMUNICATIONS, 1972, 10 (06) :479-+
[6]  
LANDSBERG PT, 1961, THERMODYNAMICS QUANT, P282
[7]   PHOTON-RADIATIVE RECOMBINATION OF ELECTRONS AND HOLES IN GERMANIUM [J].
VANROOSBROECK, W ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1954, 94 (06) :1558-1560
[8]   BAND-TO-BAND RADIATIVE RECOMBINATION IN GROUPS 4, 6, AND 3-V SEMICONDUCTORS (I) [J].
VARSHNI, YP .
PHYSICA STATUS SOLIDI, 1967, 19 (02) :459-+
[9]  
VOLKOV AS, 1971, SOV PHYS SEMICOND+, V4, P1593