REDUCED INDIUM INCORPORATION DURING THE MBE GROWTH OF IN(AL,GA)AS

被引：5

作者：

MCELHINNEY, M

STANLEY, CR

机构：

[1] Department of Electronics and Electrical Engineering, University of Glasgow

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 14期

关键词：

SEMICONDUCTOR GROWTH; EPITAXY AND EPITAXIAL GROWTH;

D O I：

10.1049/el:19930869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A reduction in indium incorporation during the MBE growth of In(Al,Ga)As at moderate temperatures has been observed by RHEED oscillations and confirmed by X-ray diffractometry. The cause is believed to be surface segregation which can result in an under-estimate of the indium flux calculated from InAs RHEED oscillations, and the growth under non-optimum conditions of In-deficient In(Al,Ga)As with poor morphology.

引用

页码：1302 / 1304

页数：3

共 6 条

[1] REPRODUCIBLE GROWTH-CONDITIONS BY GROUP-III AND GROUP-V CONTROLLED INCORPORATION RATE MEASUREMENTS [J].