GROWTH-RATE AND COMPOSITION CALIBRATION OF III/V MATERIALS ON GAAS AND INP USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS

被引：15

作者：

KOPF, RF ^{[1
]}

KUO, JM ^{[1
]}

OHRING, M ^{[1
]}

机构：

[1] STEVENS INST TECHNOL LIB,HOBOKEN,NJ 07030

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1116/1.585380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of reflection high-energy electron diffraction oscillations to obtain lattice-matched In0.53Ga0.47As and In0.52Al0.48As on InP is described. This method has also been extended to the growth of strained In(y)Ga1-yAs and In(x)Al1-xAs on InP as well as that of quaternary In1-x-yGa(x)Al(y)As compositions, lattice-matched in InP.

引用

页码：1920 / 1923

页数：4

共 10 条

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