Temperature-mediated phase selection during growth of GaN on (111)A and ((1)over-bar(1)over-bar(1)over-bar)B GaAs substrates

被引:42
作者
Yang, JW
Kuznia, JN
Chen, QC
Khan, MA
George, T
DeGraef, M
Mahajan, S
机构
[1] CALTECH,JET PROP LAB,CTR SPACE MICROELECTR TECHNOL,PASADENA,CA 91109
[2] CARNEGIE MELLON UNIV,DEPT MAT SCI & ENGN,PITTSBURGH,PA 15213
关键词
D O I
10.1063/1.115374
中图分类号
O59 [应用物理学];
学科分类号
摘要
GaN layers having the zinc blende and wurtzite structures can be selectively deposited on (111)A and ((111) over bar)B GaAs substrates by varying the growth temperature. Using the growth temperature as a variable, layers having the two structures have been sequentially deposited. The as-grown structures have been examined by cross-sectional high resolution electron microscopy. Results indicate that the two phases once formed are structurally stable in the temperature range examined. Furthermore, the transition from GaN (zinc blende) to GaN (wurtzite) is sharp, whereas a faulted region is observed during the reverse transition. Arguments have been developed to rationalize these observations. (C) 1995 American Institute of Physics.
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页码:3759 / 3761
页数:3
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