AN ANALYTICAL MODEL FOR THE STEADY-STATE AND TRANSIENT CHARACTERISTICS OF THE POWER INSULATED-GATE BIPOLAR-TRANSISTOR

被引：172

作者：

HEFNER, AR

BLACKBURN, DL

机构：

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 10期

关键词：

D O I：

10.1016/0038-1101(88)90025-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1513 / 1532

页数：20

共 25 条

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