ELECTRON-MOBILITY IN SI INVERSION-LAYERS

被引：49

作者：

MASAKI, K

HAMAGUCHI, C

TANIGUCHI, K

IWASE, M

机构：

[1] OSAKA UNIV,FAC ENGN,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

[2] TOSHIBA CO LTD,ULSI RES CTR,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.1856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1856 / 1863

页数：8

共 28 条

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[24] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].

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SUN, SC ;

PLUMMER, JD .

[26]

Takagi S., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P398, DOI 10.1109/IEDM.1988.32840

THORNBER, KK .

[28] A MOBILITY MODEL FOR CARRIERS IN THE MOS INVERSION LAYER [J].

YAMAGUCHI, K .