NORMAL ELECTRIC-FIELD DEPENDENCE OF ELECTRON-MOBILITY IN MOS INVERSION LAYER

[1] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 35 - 40

[2] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS AT THE SI-SIO2 INTERFACE AS DETERMINED BY A TIME-OF-FLIGHT TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1445 - 1456

[3] COOPER JA, 1981, ELECTRON DEVIC LETT, V2, P171, DOI 10.1109/EDL.1981.25387

[4] COOPER JA, 1980, JUN IEEE DEV RES C I

[5] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[6] HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1976, 14 (12): : 5364 - 5371

[7] HOT-ELECTRON TRANSPORT IN VERY SHORT SEMICONDUCTORS [J]. PHYSICA B & C, 1985, 134 (1-3): : 87 - 96

[8] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1254 - 1257

[9] 2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (04) : 906 - &

[10] MOCK MS, 1973, SOLID STATE ELECTRON, V16, P603

[1] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 35 - 40

[2] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS AT THE SI-SIO2 INTERFACE AS DETERMINED BY A TIME-OF-FLIGHT TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1445 - 1456

[3] COOPER JA, 1981, ELECTRON DEVIC LETT, V2, P171, DOI 10.1109/EDL.1981.25387

[4] COOPER JA, 1980, JUN IEEE DEV RES C I

[5] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[6] HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1976, 14 (12): : 5364 - 5371

[7] HOT-ELECTRON TRANSPORT IN VERY SHORT SEMICONDUCTORS [J]. PHYSICA B & C, 1985, 134 (1-3): : 87 - 96

[8] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1254 - 1257

[9] 2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (04) : 906 - &

[10] MOCK MS, 1973, SOLID STATE ELECTRON, V16, P603