HOT-ELECTRON TRANSPORT IN VERY SHORT SEMICONDUCTORS

[1] DIRECT MEASUREMENT OF VELOCITY OVERSHOOT BY HOT-ELECTRON, SUBMILLIMETER WAVE CONDUCTIVITY IN SI INVERSION-LAYERS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC7): : 369 - 374

[2] ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .1. [J]. SOLID-STATE ELECTRONICS, 1980, 23 (06) : 519 - 530

[3] ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .2. THE VERY SMALL DEVICE [J]. SOLID-STATE ELECTRONICS, 1980, 23 (06) : 531 - 544

[4] HIGH-FIELD DRIFT VELOCITY OF SILICON INVERSION LAYERS - MONTE-CARLO CALCULATION [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 350 - 353

[5] COOL RK, 1983, IEEE T ELECTRON DEV, V29, P970

[6] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS AT THE SI-SIO2 INTERFACE AS DETERMINED BY A TIME-OF-FLIGHT TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1445 - 1456

[7] FOURIER-ANALYSIS OF MAGNETOPHONON AND 2-DIMENSIONAL SHUBNIKOV-DE HAAS MAGNETORESISTANCE STRUCTURE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (07): : 1034 - 1053

[8] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[9] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &

[10] HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1976, 14 (12): : 5364 - 5371

[1] DIRECT MEASUREMENT OF VELOCITY OVERSHOOT BY HOT-ELECTRON, SUBMILLIMETER WAVE CONDUCTIVITY IN SI INVERSION-LAYERS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC7): : 369 - 374

[2] ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .1. [J]. SOLID-STATE ELECTRONICS, 1980, 23 (06) : 519 - 530

[3] ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .2. THE VERY SMALL DEVICE [J]. SOLID-STATE ELECTRONICS, 1980, 23 (06) : 531 - 544

[4] HIGH-FIELD DRIFT VELOCITY OF SILICON INVERSION LAYERS - MONTE-CARLO CALCULATION [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 350 - 353

[5] COOL RK, 1983, IEEE T ELECTRON DEV, V29, P970

[6] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS AT THE SI-SIO2 INTERFACE AS DETERMINED BY A TIME-OF-FLIGHT TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1445 - 1456

[7] FOURIER-ANALYSIS OF MAGNETOPHONON AND 2-DIMENSIONAL SHUBNIKOV-DE HAAS MAGNETORESISTANCE STRUCTURE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (07): : 1034 - 1053

[8] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[9] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &

[10] HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1976, 14 (12): : 5364 - 5371