HOT-ELECTRON TRANSPORT IN VERY SHORT SEMICONDUCTORS

[11] HOT-CARRIER CONSTRAINTS ON TRANSIENT TRANSPORT IN VERY SMALL SEMICONDUCTOR-DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 905 - 911

[12] OPTICAL AND INTERVALLEY SCATTERING IN QUANTIZED INVERSION LAYERS IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1976, 57 (01) : 218 - 228

[13] BALLISTIC AND OVERSHOOT ELECTRON-TRANSPORT IN BULK SEMICONDUCTORS AND IN SUBMICRONIC DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 214 - 221

[14] EFFECT OF BOUNDARY-CONDITIONS ON HOT-ELECTRON TRANSPORT IN SHORT SEMICONDUCTORS [J]. PHYSICA B & C, 1983, 117 (MAR): : 238 - 240

[15] Hamaguchi C., 1983, Japanese Journal of Applied Physics, Supplement, V22, P190

[16] HAMAGUCHI C, 1985, 1984 OSAK U INT S NA, P34

[17] NON-OHMIC ELECTRON CONDUCTION IN SILICON SURFACE INVERSION LAYERS AT LOW-TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1721 - 1727

[18] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1254 - 1257

[19] WARM AND HOT CARRIERS IN SILICON SURFACE-INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1974, 10 (08) : 3375 - 3386

[20] REVIEW OF EXPERIMENTAL ASPECTS OF HOT-ELECTRON TRANSPORT IN MOS STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 123 - 132

[11] HOT-CARRIER CONSTRAINTS ON TRANSIENT TRANSPORT IN VERY SMALL SEMICONDUCTOR-DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 905 - 911

[12] OPTICAL AND INTERVALLEY SCATTERING IN QUANTIZED INVERSION LAYERS IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1976, 57 (01) : 218 - 228

[13] BALLISTIC AND OVERSHOOT ELECTRON-TRANSPORT IN BULK SEMICONDUCTORS AND IN SUBMICRONIC DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 214 - 221

[14] EFFECT OF BOUNDARY-CONDITIONS ON HOT-ELECTRON TRANSPORT IN SHORT SEMICONDUCTORS [J]. PHYSICA B & C, 1983, 117 (MAR): : 238 - 240

[15] Hamaguchi C., 1983, Japanese Journal of Applied Physics, Supplement, V22, P190

[16] HAMAGUCHI C, 1985, 1984 OSAK U INT S NA, P34

[17] NON-OHMIC ELECTRON CONDUCTION IN SILICON SURFACE INVERSION LAYERS AT LOW-TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1721 - 1727

[18] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1254 - 1257

[19] WARM AND HOT CARRIERS IN SILICON SURFACE-INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1974, 10 (08) : 3375 - 3386

[20] REVIEW OF EXPERIMENTAL ASPECTS OF HOT-ELECTRON TRANSPORT IN MOS STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 123 - 132