EFFECT OF BOUNDARY-CONDITIONS ON HOT-ELECTRON TRANSPORT IN SHORT SEMICONDUCTORS

被引：3

作者：

HAMAGUCHI, C ^{[1
]}

TERASHIMA, K ^{[1
]}

SHIBATOMI, A ^{[1
]}

RYUZAN, O ^{[1
]}

机构：

[1] FUJITSU LABS LTD, NAKAHARA KU, KAWASAKI, KANAGAWA 211, JAPAN

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90493-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：238 / 240

页数：3

共 10 条

[1] DIRECT MEASUREMENT OF VELOCITY OVERSHOOT BY HOT-ELECTRON, SUBMILLIMETER WAVE CONDUCTIVITY IN SI INVERSION-LAYERS
ALLEN, SJ
TSUI, DC
DEROSA, F
THORNBER, KK
WILSON, BA
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC7): : 369 - 374
[2] DIFFUSION EFFECTS AND BALLISTIC TRANSPORT
COOK, RK
FREY, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 951 - 953
[3] BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS
HESS, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 937 - 940
[4] Laval S., 1980, International Electron Devices Meeting. Technical Digest, P626
[5] TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP
MALONEY, TJ
FREY, J
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 781 - 787
[6] POLAR MODE SCATTERING IN BALLISTIC TRANSPORT GAAS DEVICES
MALONEY, TJ
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (04): : 54 - 54
[7] IMPORTANCE OF BOUNDARY-CONDITIONS TO CONDUCTION IN SHORT SAMPLES
ROSENBERG, JJ
YOFFA, EJ
NATHAN, MI
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 941 - 944
[8] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS
RUCH, JG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 652 - &
[9] PICOSECOND NON-EQUILIBRIUM CARRIER TRANSPORT IN GAAS
SHANK, CV
FORK, RL
GREENE, BI
REINHART, FK
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (02) : 104 - 105
[10] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC
SHUR, MS
EASTMAN, LF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1677 - 1683

← 1 →