A COMPARISON OF AMORPHOUS AND POLY CRYSTALLINE TFTS FOR LC DISPLAYS

被引：7

作者：

THOMPSON, MJ

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80341-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper contrasts the process and device architectures for these two technologies. The influence of the device architecture on display performance is discussed. The device characteristics are described, in particular the issues surrounding the on and off currents and their implications on AMLCDs. The current applications of poly-Si TFTs as integrated drivers in AMLCDs are described.

引用

页码：1209 / 1214

页数：6

共 11 条

[1]

AOYAMA T, 1988, MATER RES SOC S P, V106, P347

[2]

CHIANG A, 1987, MATER RES SOC S P PO, V106, P305

[3]

HAWKINS WG, 1986, IEEE T ELECT DEV, V23, P477

[4] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].