RETARDATION OF NUCLEATION RATE FOR GRAIN-SIZE ENHANCEMENT BY DEEP SILICON ION-IMPLANTATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS

被引：67

作者：

WU, IW

CHIANG, A

FUSE, M

OVECOGLU, L

HUANG, TY

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.343327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4036 / 4039

页数：4

共 13 条

[1]

AOYAMA T, 1987, MATERIALS RES SOC S, V106, P347

[2] RECOIL CONTRIBUTION TO ION-IMPLANTATION ENERGY-DEPOSITION DISTRIBUTIONS [J].

BRICE, DK .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3385-3394

[3]

CHIANG A, 1987, MATER RES SOC S P PO, V106, P305

[4] LOW-TEMPERATURE GRAIN-GROWTH OF INITIALLY (100) TEXTURED POLYCRYSTALLINE SILICON FILMS AMORPHIZED BY SILICON ION-IMPLANTATION WITH NORMAL INCIDENT ANGLE [J].

EGAMI, K ;

OGURA, A ;

KIMURA, M .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :289-291

[5]

Hack M., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P252, DOI 10.1109/IEDM.1988.32804

[6] HYDROGENATION OF TRANSISTORS FABRICATED IN POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI ;

MARCOUX .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :159-161

[7] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

KENNEDY, EF ;

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246

[8] SEED SELECTION THROUGH ION CHANNELING TO MODIFY CRYSTALLOGRAPHIC ORIENTATIONS OF POLYCRYSTALLINE SI FILMS ON SIO2 - IMPLANT ANGLE DEPENDENCE [J].

KUNG, KTY ;

IVERSON, RB ;

REIF, R .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :683-685

[9]

Lewis A. G., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P264, DOI 10.1109/IEDM.1988.32807

[10]

Lewis A. G., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P260, DOI 10.1109/IEDM.1988.32806

← 1 2 →