SEED SELECTION THROUGH ION CHANNELING TO MODIFY CRYSTALLOGRAPHIC ORIENTATIONS OF POLYCRYSTALLINE SI FILMS ON SIO2 - IMPLANT ANGLE DEPENDENCE

被引：17

作者：

KUNG, KTY

IVERSON, RB

REIF, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 07期

关键词：

D O I：

10.1063/1.95529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：683 / 685

页数：3

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共 7 条

[1] CRITICAL CHANNELING ANGLES OF LOW-ENERGY IONS IN SILICON
GRAHMANN, H
FEUERSTEIN, A
KALBITZER, S
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (02): : 117 - 119
[2] IVERSON RB, 1984, MATER RES SOC S P, V27, P543
[3] CHANNELING PATTERNS RECORDED USING RADIOACTIVE RECOIL ATOMS
JECH, C
[J]. PHYSICS LETTERS A, 1972, A 39 (05) : 417 - &
[4] SEED SELECTION THROUGH ION CHANNELING TO PRODUCE UNIFORMLY ORIENTED POLYCRYSTALLINE Si FILMS ON SiO2.
Kung, E.T.-Y.
Iverson, R.B.
Reif, R.
[J]. Materials Letters, 1984, 3 (1-2) : 24 - 28
[5] KWIZERA P, 1982, APPL PHYS LETT, V41, P379, DOI 10.1063/1.93502
[6] ANNEALING BEHAVIOR OF THIN POLYCRYSTALLINE SILICON FILMS DAMAGED BY SILICON ION-IMPLANTATION IN THE CRITICAL AMORPHIZATION RANGE
KWIZERA, P
REIF, R
[J]. THIN SOLID FILMS, 1983, 100 (03) : 227 - 233
[7] LOW-TEMPERATURE PROCESS TO INCREASE THE GRAIN-SIZE IN POLYSILICON FILMS
REIF, R
KNOTT, JE
[J]. ELECTRONICS LETTERS, 1981, 17 (17) : 586 - 588