CHANNELING PATTERNS RECORDED USING RADIOACTIVE RECOIL ATOMS

[1] RANGE OF RECOIL ATOMS IN ISOTROPIC STOPPING MATERIALS [J]. ZEITSCHRIFT FUR PHYSIK, 1968, 211 (05): : 495 - &

[2] CERNY F, PRIVATE COMMUNICATIO

[3] RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) : 1070 - &

[4] Channelling Patterns Based on Penetration of Low-Energy Ions [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (03): : 579 - 583

[5] DEPTH DISTRIBUTION MEASUREMENTS USING BOMBARDMENT-ENHANCED SOLUBILITY [J]. PHYSICA STATUS SOLIDI, 1968, 27 (02): : 573 - &

[6] Lindhard J., 1965, KGL DAN VID SELSK MA, P34

[7] The Influence of Channelling on Radiation Damage Produced in Silicon during Ion Bombardment [J]. JOURNAL OF MATERIALS SCIENCE, 1967, 2 (03) : 211 - 216

[1] RANGE OF RECOIL ATOMS IN ISOTROPIC STOPPING MATERIALS [J]. ZEITSCHRIFT FUR PHYSIK, 1968, 211 (05): : 495 - &

[2] CERNY F, PRIVATE COMMUNICATIO

[3] RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) : 1070 - &

[4] Channelling Patterns Based on Penetration of Low-Energy Ions [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (03): : 579 - 583

[5] DEPTH DISTRIBUTION MEASUREMENTS USING BOMBARDMENT-ENHANCED SOLUBILITY [J]. PHYSICA STATUS SOLIDI, 1968, 27 (02): : 573 - &

[6] Lindhard J., 1965, KGL DAN VID SELSK MA, P34

[7] The Influence of Channelling on Radiation Damage Produced in Silicon during Ion Bombardment [J]. JOURNAL OF MATERIALS SCIENCE, 1967, 2 (03) : 211 - 216