LOW-TEMPERATURE GRAIN-GROWTH OF INITIALLY (100) TEXTURED POLYCRYSTALLINE SILICON FILMS AMORPHIZED BY SILICON ION-IMPLANTATION WITH NORMAL INCIDENT ANGLE

被引：7

作者：

EGAMI, K

OGURA, A

KIMURA, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 01期

关键词：

D O I：

10.1063/1.336831

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：289 / 291

页数：3

共 11 条

[1] CRYSTALLOGRAPHIC ORIENTATION CONTROL OF SILICON STRIPES IN SIO2 GROOVES USING A NEW DOUBLE LASER ANNEALING TECHNIQUE [J].

EGAMI, K ;

KIMURA, M ;

HAMAGUCHI, T .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :962-964

[2]

EGAMI K, 1985, MATER RES SOC S P, V35, P669

[3] ZONE-MELTING RECRYSTALLIZATION OF SI FILMS WITH A MOVEABLE-STRIP-HEATER OVEN [J].

GEIS, MW ;

SMITH, HI ;

TSAUR, BY ;

FAN, JCC ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2812-2818

[4]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] GROWTH OF SINGLE-CRYSTAL SILICON ISLANDS ON BULK FUSED-SILICA BY CO-2 LASER ANNEALING [J].

HAWKINS, WG ;

BLACK, JG ;

GRIFFITHS, CH .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :319-321

[6] INFLUENCE OF AS-DEPOSITED FILM STRUCTURE ON (100) TEXTURE IN LASER-RECRYSTALLIZED SILICON ON FUSED QUARTZ [J].

KIMURA, M ;

EGAMI, K .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :420-422

[7] OPTICAL INVESTIGATION OF DIFFERENT SILICON FILMS [J].

KUHL, C ;

SCHLOTTERER, H ;

SCHWIDEFSKY, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) :1496-1500

[8] SEED SELECTION THROUGH ION CHANNELING TO PRODUCE UNIFORMLY ORIENTED POLYCRYSTALLINE Si FILMS ON SiO2. [J].

Kung, E.T.-Y. ;

Iverson, R.B. ;

Reif, R. .

Materials Letters, 1984, 3 (1-2) :24-28

[9] LOW-TEMPERATURE PROCESS TO INCREASE THE GRAIN-SIZE IN POLYSILICON FILMS [J].

REIF, R ;

KNOTT, JE .

ELECTRONICS LETTERS, 1981, 17 (17) :586-588

[10] SURFACE-ENERGY-DRIVEN SECONDARY GRAIN-GROWTH IN ULTRATHIN (LESS-THAN-100 NM) FILMS OF SILICON [J].

THOMPSON, CV ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :603-605

← 1 2 →