PRIMARY PHOTOCURRENT ANALYSIS BY NOISE MEASUREMENTS IN N+P-PI-P+ AVALANCHE PHOTO-DIODES

被引：2

作者：

ALABEDRA, R

MAILLE, C

RATSIRA, D

LECOY, G

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1980年 / 15卷 / 07期

关键词：

D O I：

10.1051/rphysap:019800015070120100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1201 / 1208

页数：8

共 8 条

[1]

BENOIT J, 1973, DGRST727051800221750

[2] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].

GARTNER, WW .

PHYSICAL REVIEW, 1959, 116 (01) :84-87

[3]

LECROSNIER D, 1975, TECHN DIG INT ELECTR, P595

[4]

Mayer J. W., 1970, ION IMPLANTATION SEM

[5] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

[6]

RATSIRA D, 1978, THESIS MONTPELLIER

[7] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J].

READ, WT .

BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02) :401-446

[8] AN OPTIMIZED AVALANCHE PHOTODIODE [J].

RUEGG, HW .