VERTICAL OPTICAL COMMUNICATION THROUGH STACKED SILICON-WAFERS USING HYBRID MONOLITHIC THIN-FILM INGAASP EMITTERS AND DETECTORS

被引：19

作者：

CALHOUN, KH

CAMPERIGINESTET, CB

JOKERST, NM

机构：

[1] Microelectronics Research Center, School of Electrical Engineering, Georgia Institute of Technology, Atlanta

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.196022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical communication through stacked silicon wafers has been demonstrated for the first time using hybrid monolithic thin film InP/InGaAsP light emitting diodes and double heterostructure p-i-n photodetectors operating at lambda = 13 mum. A modified epitaxial liftoff technique was employed to align and deposit an emitter on a nitride coated, polished silicon wafer and to similarly deposit a detector on an identical silicon wafer. These wafers were then stacked with the emitter and detector aligned to demonstrate optical communication through stacked silicon wafers. This inexpensive and manufacturable three-dimensional optical interconnection scheme is a promising technology for implementation of massively parallel signal processing systems.

引用

页码：254 / 257

页数：4

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