THE CHARACTERIZATION OF HETERO-EPITAXIAL SILICON

被引：18

作者：

CULLEN, GW

ABRAHAMS, MS

CORBOY, JF

DUFFY, MT

HAM, WE

JASTRZEBSKI, L

SMITH, RT

BLUMENFELD, M

HARBEKE, G

LAGOWSKI, J

机构：

[1] RCA SOLID STATE DIV, PALM BEACH GARDENS, FL 33403 USA

[2] RCA LABS LTD, CH-8042 ZURICH, SWITZERLAND

[3] MIT, CAMBRIDGE, MA 02139 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90446-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：281 / 295

页数：15

共 22 条

[1] DIRECT OBSERVATION OF A SILICON-SAPPHIRE HETEROEPITAXIAL INTERFACE BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J].

ABRAHAMS, MS ;

HUTCHISON, JL ;

BOOKER, GR .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 63 (01) :K3-&

[2] SHEAR STRAIN AT CORNERS AND EDGES OF EPITAXIAL SILICON ON SAPPHIRE [J].

ABRAHAMS, MS ;

BLANC, J ;

BUIOCCHI, CJ ;

HAM, WE .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) :652-657

[3] MISFIT DISLOCATIONS IN HETEROEPITAXIAL SI ON SAPPHIRE [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ ;

CORBOY, JF ;

CULLEN, GW .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :275-277

[4] EARLY GROWTH OF SILICON ON SAPPHIRE .1. TRANSMISSION ELECTRON MICROSOPY [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ ;

SMITH, RT ;

CORBOY, JF ;

BLANC, J ;

CULLEN, GW .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5139-5150

[5] SOME EFFECTS OF PLANAR DEFECTS NEAR SI-SIO2 INTERFACE ON ELECTRICAL-PROPERTIES OF SILICON-ON-SAPPHIRE-MOS DEVICES [J].

ABRAHAMS, MS ;

HAM, WE .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :773-775

[6] CROSS-SECTIONAL SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3315-3316

[7] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J].

ABRAHAMS, MS ;

WEISBERG, LR ;

BUIOCCHI, CJ ;

BLANC, J .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :223-&

[8]

BLUMENFELD M, COMMUNICATION

[9]

DUFFY MT, 1979, J ELECTROCHEM SOC, V126, pC341

[10]

DUFFY MT, 1979, OCT EL SOC M LOS ANG

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