NEGATIVE RESIST FOR I-LINE LITHOGRAPHY UTILIZING ACID-CATALYZED SILANOL-CONDENSATION REACTION

被引:7
作者
HAYASHI, N
TADANO, K
TANAKA, T
SHIRAISHI, H
UENO, T
IWAYANAGI, T
机构
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 11期
关键词
CHEMICAL AMPLIFICATION; NEGATIVE RESIST; I-LINE LITHOGRAPHY; ONIUM SALT; SILANOL CONDENSATION;
D O I
10.1143/JJAP.29.2632
中图分类号
O59 [应用物理学];
学科分类号
摘要
Negative resist systems composed of a novolak resin, diphenylsilanediol (Ph2Si(OH)2) and an acid generator are investigated for i-line lithography. The reaction in this resist system is based on an acid-catalyzed condensation reaction; the acid produced in the exposed area induces a condensation reaction of Ph2Si(OH)2 during post-exposure baking. The condensation product, siloxane, acts as an aqueous-base dissolution inhibitor, while silanol compounds in unexposed areas work as dissolution accelerators. The resist composed of a novolak resin, Ph2Si(OH)2 and 2-naphtoylmethyl-tetramethylenesulfonium hexafluoroantimonate (NMTMS-SbF6) shows a sensitivity of about 200 mJ/cm2 at 365 nm. This sensitivity is lower than that at 248 nm when triphenylsulfonium triflate (Ph3S+OTf-) is used as an acid generator, which can be ascribed to the low quantum yield of acid generation from NMTMS-SbF6. Using this resist, 0.3 mu-m space patterns with 1 mu-m film thickness were obtained by combining an i-line stepper with a phase-shifting mask.
引用
收藏
页码:2632 / 2637
页数:6
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