SUB-HALF-MICRON I-LINE LITHOGRAPHY BY USE OF LMR-UV RESIST

被引：12

作者：

JINBO, H ^{[1
]}

YAMASHITA, Y ^{[1
]}

ENDO, A ^{[1
]}

NISHIBU, S ^{[1
]}

UMEHARA, H ^{[1
]}

ASANO, T ^{[1
]}

机构：

[1] FUJI CHEM IND CO LTD,MINATO KU,TOKYO 106,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.2053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2053 / 2057

页数：5

共 8 条

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[3] KAWAZU R, 1988, 49TH AUT M JSAP
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LEVENSON, MD
VISWANATHAN, NS
SIMPSON, RA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1828 - 1836
[5] THE PHASE-SHIFTING MASK .2. IMAGING SIMULATIONS AND SUBMICROMETER RESIST EXPOSURES
LEVENSON, MD
GOODMAN, DS
LINDSEY, S
BAYER, PW
SANTINI, HAE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) : 753 - 763
[6] NODA S, 1988, 10TH P S DRY PROC, P27
[7] Suwa K., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V922, P270
[8] Terasawa T., 1989, P SOC PHOTO-OPT INS, V1088, P142