LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF BORON-NITRIDE FILMS USING HYDROGEN AZIDE

被引：12

作者：

ISHIHARA, R

SUGIURA, O

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 26期

关键词：

D O I：

10.1063/1.106707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stoichiometric boron-nitride films have been successfully deposited at temperatures as low as 400-degrees-C by chemical vapor deposition using diborane (B2H6) and hydrogen azide (HN3). The film deposited on the silicon substrate at 475-degrees-C was amorphous and contained hydrogen atoms with a density of 1.3 X 10(22) cm-3. The breakdown field strength and the low-field resistivity were 2.8 MV / cm and 10(15) OMEGA-cm, respectively. The optical and low-frequency dielectric constants were 3.6 and 4.0, respectively. Metal-insulator-metal device equipped with this film showed steep current-voltage characteristics.

引用

页码：3244 / 3246

页数：3

共 10 条

[1] CHEMICAL-DEPOSITION OF BORON-NITROGEN FILMS [J].