CHARACTERISTICS OF RELIEF PHASE HOLOGRAMS RECORDED IN PHOTORESISTS

被引：73

作者：

BARTOLINI, RA ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

APPLIED OPTICS | 1974年 / 13卷 / 01期

关键词：

D O I：

10.1364/AO.13.000129

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：129 / 139

页数：11

共 27 条

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[8] EXPOSURE OF PHOTORESISTS .2. ELECTRON AND LIGHT EXPOSURE OF A POSITIVE PHOTORESIST [J].

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[9]

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