HOLE TRAPPING, SUBSTRATE CURRENTS, AND BREAKDOWN IN THIN SILICON DIOXIDE FILMS

被引：40

作者：

DIMARIA, DJ

机构：

[1] IBM Thomas J. Watson Research Center, Heights

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 05期

关键词：

D O I：

10.1109/55.382234

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using oxide-trapped-charge sensing techniques on FET's after high-field Fowler-Nordheim-stress, anode hole injection is shown to be important only for gate voltages larger than approximate to 7.6 V for either p- or n-channel devices with n+ poly-Si gates independent of oxide thickness. These results do not support popular models for thin oxide degradation and ''intrinsic'' breakdown based on hole trapping in the oxide layer at lower voltages.

引用

页码：184 / 186

页数：3

共 8 条

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