FIELD-DEPENDENCE OF 2 LARGE HOLE CAPTURE CROSS-SECTIONS IN THERMAL OXIDE ON SILICON

被引：39

作者：

TZOU, JJ ^{[1
]}

SUN, JYC ^{[1
]}

SAH, CT ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期

关键词：

D O I：

10.1063/1.94529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：861 / 863

页数：3

共 9 条

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[8] A STUDY OF OXIDE TRAPS AND INTERFACE STATES OF THE SILICON-SILICON DIOXIDE INTERFACE [J].

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[9]

TZOU JJ, 1983, J APPL PHYS, V54, P4378

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