GENERATION ANNEALING KINETICS OF INTERFACE STATES ON OXIDIZED SILICON ACTIVATED BY 10.2-EV PHOTOHOLE INJECTION

被引：67

作者：

SAH, CT ^{[1
]}

SUN, JYC ^{[1
]}

TZOU, JJT ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.330443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：8886 / 8893

页数：8

共 39 条

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