PRESSURE-DEPENDENCE OF DEEP ELECTRONIC LEVELS IN SEMICONDUCTORS - THE OXYGEN-VACANCY PAIR (OR A-CENTER) IN SILICON

被引：21

作者：

SAMARA, GA

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.36.4841

中图分类号：

T [工业技术];

学科分类号：

08 ;

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页码：4841 / 4848

页数：8

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共 23 条

[1] ELECTRONIC-STRUCTURE OF GOLD SUBSTITUTIONAL IMPURITY IN SILICON
ALVES, JLA
LEITE, JR
ASSALI, LVC
GOMES, VMS
DASILVA, CETG
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (29): : L771 - L774
[2] PRESSURE-DEPENDENCE OF THE ELECTRON-CAPTURE CROSS-SECTION OF THE B-HOLE TRAP IN LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE
BARNES, CE
SAMARA, GA
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 677 - 679
[3] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON
BEMSKI, G
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1195 - 1198
[4] LATTICE-DISTORTIONS FOR ARSENIC IN SINGLE-CRYSTAL SILICON
ERBIL, A
WEBER, W
CARGILL, GS
BOEHME, RF
[J]. PHYSICAL REVIEW B, 1986, 34 (02): : 1392 - 1394
[5] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
HENRY, CH
LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
[6] PRESSURE-DEPENDENCE OF OXYGEN-RELATED DEFECT LEVELS IN SILICON
KELLER, WW
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3471 - 3477
[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[8] LANG DV, 1980, PHYS REV B, V22, P2917
[9] ANALYSIS OF THERMAL CAPTURE OF THE ACCEPTOR LEVEL OF GOLD IN SILICON
MORANTE, JR
CARCELLER, JE
CARTUJO, P
BARBOLLA, JJ
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 111 (01): : 375 - 382
[10] Pantelides S. T., 1986, DEEP CTR SEMICONDUCT