ANALYSIS OF THERMAL CAPTURE OF THE ACCEPTOR LEVEL OF GOLD IN SILICON

被引：12

作者：

MORANTE, JR ^{[1
]}

CARCELLER, JE ^{[1
]}

CARTUJO, P ^{[1
]}

BARBOLLA, JJ ^{[1
]}

机构：

[1] UNIV SARAGOSSA,DEPT ELECT & ELECTR,SARAGOSSA,SPAIN

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1982年 / 111卷 / 01期

关键词：

D O I：

10.1002/pssb.2221110143

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：375 / 382

页数：8

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