THERMAL CAPTURE CROSS-SECTION OF HOLES AT THE EV + 0.34 EV OF SI-PT

被引：10

作者：

CARCELLE, JE ^{[1
]}

CARTUJO, P ^{[1
]}

MORANTE, JR ^{[1
]}

BARBOLLA, J ^{[1
]}

BRABANT, JC ^{[1
]}

BROUSSEAU, M ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON, PHYS SOLIDES LAB, F-31077 TOULOUSE, FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1980年 / 15卷 / 04期

关键词：

D O I：

10.1051/rphysap:01980001504084300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：843 / 848

页数：6

共 19 条

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[4]

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[6] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON AS DETERMINED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

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SUN, E .

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[7]

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[9] PLATINUM AS A LIFETIME-CONTROL DEEP IMPURITY IN SILICON [J].

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[10]

LISIAK KP, 1975, SOLID STATE ELECTRON, V18, P553

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