INGAASP-INP NATIVE OXIDE STRIPE LASERS

被引：5

作者：

SAKAI, S ^{[1
]}

UMENO, M ^{[1
]}

AOKI, T ^{[1
]}

TOBE, M ^{[1
]}

AMEMIYA, Y ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 05期

关键词：

D O I：

10.1143/JJAP.18.1003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

收藏

页码：1003 / 1004

页数：2

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[2] ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS
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[3] CARRIER LIFETIME MEASUREMENT OF GAINASP/INP DOUBLE-HETEROSTRUCTURE LASERS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (06) : 1057 - 1058
[4] GROWTH OF LATTICE-MATCHED INGAASP-INP DOUBLE-HETEROSTRUCTURES BY 2-PHASE SUPERCOOLED SOLUTION TECHNIQUE
SAKAI, K
AKIBA, S
YAMAMOTO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) : 2043 - 2044
[5] INGAASP-INP DOUBLE-HETEROSTRUCTURE PHOTO-DIODES
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AMEMIYA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (09) : 1701 - 1702
[6] SZE SM, 1969, PHYSICS SEMICONDUCTO, P425