GROWTH AND PROPERTIES OF HG1-XCDXTE ON GAAS, WITH X CONGRUENT-TO 0.27

被引：7

作者：

NATARAJAN, V

TASKAR, NR

BHAT, IB

GHANDHI, SK

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 06期

关键词：

D O I：

10.1007/BF02652097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：479 / 483

页数：5

共 12 条

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[6] GROWTH AND PROPERTIES OF HG1-XCDXTE ON GAAS SUBSTRATES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

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[7] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].

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[8] TRANSMISSION ELECTRON-MICROSCOPY OF (001) CDTE ON (001) GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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