GROWTH AND PROPERTIES OF HG1-XCDXTE ON GAAS SUBSTRATES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：15

作者：

GHANDHI, SK

BHAT, IB

TASKAR, NR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.336371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2253 / 2255

页数：3

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[1] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
BICKNELL, RN
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[2] MOLECULAR-BEAM EPITAXY OF ALLOYS AND SUPERLATTICES INVOLVING MERCURY
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[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY HGTE AND HG1-XCDXTE ONTO GAAS (001) SUBSTRATES
FAURIE, JP
SIVANANTHAN, S
BOUKERCHE, M
RENO, J
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1307 - 1309
[4] HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS
GHANDHI, SK
BHAT, I
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 779 - 781
[5] GROWTH OF CDTE ON GAAS BY ORGANOMETALLIC VAPOR-PHASE HETEROEPITAXY
GHANDHI, SK
TASKAR, NR
BHAT, IB
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 742 - 745
[6] METALORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE EPITAXIAL-FILMS ON INSB AND GAAS SUBSTRATES
HOKE, WE
LEMONIAS, PJ
TRACZEWSKI, R
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (11) : 1046 - 1048
[7] COMPARATIVE STUDIES OF MERCURY CADMIUM TELLURIDE SINGLE-CRYSTAL AND EPITAXIAL
RACCAH, PM
LEE, U
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1587 - 1592
[8] MOCVD GROWTH OF CDTE AND HGCDTE
SCHMIT, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 89 - 92
[9] WOOLHOUSE GR, 1984, 1984 WORKSH PHYS CHE