LOW-TEMPERATURE MOBILITY DUE TO UNSCREENED CHARGED IMPURITIES IN COMPENSATED SEMICONDUCTORS

被引：3

作者：

CAPEK, V

机构：

来源：

关键词：

D O I：

10.1007/BF01595640

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：684 / 687

页数：4

共 6 条

[1]

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[3] MOBILITY OF VERY PURE SEMICONDUCTORS AT VERY LOW-TEMPERATURES [J].

FUJITA, S ;

KO, CL ;

CHI, JY .

[4]

FUJITA S, 1966, INTRO NONEQUILIBRIUM

RIDLEY, BK .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (10) :1589-1593

ZUBAREV, DN ;

BALABANYAN, GO ;

FUJITA, S .